Silicon on Insulator/SOI


Product Detail

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Diameter 76, 100mm, 125mm, 150mm, 100mm, 300mm  
 
Device Thickness and Max Tolerance      index 2-50 +/- .5μm, 0.1~1+/- .025μm
 76mm, 100 mm, 125 mm, and 150 mm:   50-150 +/- 1μm
  >150 +/- 2μm
     index 6-50 +/- .5μm
 200 mm 50-150 +/- 1μm
  >150 +/- 2μm
Oxide Layer Thickness Standard – .5μm, 1μm, and 2μm
Optional – .1 – 10μm
Handle Wafer Thickness 3”, 100mm – 300μm and up
125 mm, 150mm – 400μm and up
200mm – 500μm and up
Tolerance: Standard +/- 25μm
Special +/- 5μm
Dopants N type – Phosphorous, Arsenic, and Antimony
P Type – Boron
Resistivities Most resistivities available on request including high resistivity Float Zone and low resistivity CZ
Orientation <1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request
Standard tolerance +/- .5 degree
Special tolerance as low as +/- .1 degree
Flat Orientation All major flats/Notches are on the <110> Plane +/-.5 degree
Tighter specificatioin available upon request
Semi std minor flats are standard on 76.2 and 100mm
Finish Double side polished standard
Optional backside finishes – nano grind or oxide
Coatings Oxide and nitride can be supplied on both sides of the wafer.
Optional Ion Implanted Buried Layer A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available.This service is provided by an outside contractor.

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