SIC


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4H N-TYPE Sic, 100MM, 350um WAFER SPECIFICATION
Artic le Number W4H100N-4-PO(or CO)-350
Description 4H Sic Substrate
Polytype 4H
Diameter (100+0.0-0.5)mm
Thickness (350+25)um(Engineering grade+50um)
Carrier Type n-type
Dopant Nitrogen
Resistivity(RT) 0.012-0.0250-cm(Engineering grade<0.0250-cm)
Wafer Orientatio (4+0.5)°
  Engineering grade Production Grade Production Grade
  2.1 2.2 2.3
Micropipe Density ≤30cm-² ≤10cm-² ≤1cm-²
Micropipe Free area  Not specified  ≥96%  ≥96%
Orientation flat(OF)  
Orientation Parallel{1-100}±5°
Orientation flat length (32.5±2.0)mm
Identification flat (IF)  
Orientation Si-face:90° cw. from orientation flat±5°
Identification flat length (18.0+2.0)mm
Surface Option1: Si-face standard polish Epi-ready C-face optical polish
  Option2: Si-face CMP Epi-ready, C-face optical polish
Package multiple wafer(25)shipping box (single wafer package upon request)

 

6H N-TYPE SIC 2 WAFER SPECIFICATION
Artic le Number W6HS1N-0-PM-250-S
Descrption Production Grade 6H SiC Substrate
Polytype 6H
Diameter (50.8±38)mm
Thickness (250±25)um 
Carrier Typen n-type
Dopant Nitrogen 
Resistivity(RT) 0.6-0.10Ω.cm
Wafer Orientation (0+0.5)°
Micropipe Density ≤100cm-²  
Orientation flat orientation parallel{1-100}±5°
Orientation flat length (15.88±1.65)mm
Identification flat orientation Si-face:90°cw. frow orientation flat±5°
Identification flat lenath (8+1.65)mm
Surface Si-face standard polish Epi-ready
  C-face matted
Package Package single wafer package or multiple wafer shipping box
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