Product Detail
Product Tags
4H N-TYPE Sic, 100MM, 350um WAFER SPECIFICATION |
Artic le Number |
W4H100N-4-PO(or CO)-350 |
Description |
4H Sic Substrate |
Polytype |
4H |
Diameter |
(100+0.0-0.5)mm |
Thickness |
(350+25)um(Engineering grade+50um) |
Carrier Type |
n-type |
Dopant |
Nitrogen |
Resistivity(RT) |
0.012-0.0250-cm(Engineering grade<0.0250-cm) |
Wafer Orientatio |
(4+0.5)° |
|
Engineering grade |
Production Grade |
Production Grade |
|
2.1 |
2.2 |
2.3 |
Micropipe Density |
≤30cm-² |
≤10cm-² |
≤1cm-² |
Micropipe Free area |
Not specified |
≥96% |
≥96% |
Orientation flat(OF) |
|
Orientation |
Parallel{1-100}±5° |
Orientation flat length |
(32.5±2.0)mm |
Identification flat (IF) |
|
Orientation |
Si-face:90° cw. from orientation flat±5° |
Identification flat length |
(18.0+2.0)mm |
Surface |
Option1: Si-face standard polish Epi-ready C-face optical polish |
|
Option2: Si-face CMP Epi-ready, C-face optical polish |
Package |
multiple wafer(25)shipping box (single wafer package upon request) |
6H N-TYPE SIC 2 WAFER SPECIFICATION |
Artic le Number |
W6HS1N-0-PM-250-S |
Descrption |
Production Grade 6H SiC Substrate |
Polytype |
6H |
Diameter |
(50.8±38)mm |
Thickness |
(250±25)um |
Carrier Typen |
n-type |
Dopant |
Nitrogen |
Resistivity(RT) |
0.6-0.10Ω.cm |
Wafer Orientation |
(0+0.5)° |
Micropipe Density |
≤100cm-² |
Orientation flat orientation |
parallel{1-100}±5° |
Orientation flat length |
(15.88±1.65)mm |
Identification flat orientation |
Si-face:90°cw. frow orientation flat±5° |
Identification flat lenath |
(8+1.65)mm |
Surface |
Si-face standard polish Epi-ready |
|
C-face matted |
Package |
Package single wafer package or multiple wafer shipping box |

Previous: Low MOQ for Semiconductors Single Crystal and silicon Wafer from China
Next: 12 inch FOSB ShinEtsu MW300G