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      4H N-TYPE Sic, 100MM, 350um WAFER SPECIFICATION
      Artic le Number W4H100N-4-PO(or CO)-350
      Description 4H Sic Substrate
      Polytype 4H
      Diameter (100+0.0-0.5)mm
      Thickness (350+25)um(Engineering grade+50um)
      Carrier Type n-type
      Dopant Nitrogen
      Resistivity(RT) 0.012-0.0250-cm(Engineering grade<0.0250-cm)
      Wafer Orientatio (4+0.5)°
        Engineering grade Production Grade Production Grade
        2.1 2.2 2.3
      Micropipe Density ≤30cm-² ≤10cm-² ≤1cm-²
      Micropipe Free area  Not specified  ≥96%  ≥96%
      Orientation flat(OF)  
      Orientation Parallel{1-100}±5°
      Orientation flat length (32.5±2.0)mm
      Identification flat (IF)  
      Orientation Si-face:90° cw. from orientation flat±5°
      Identification flat length (18.0+2.0)mm
      Surface Option1: Si-face standard polish Epi-ready C-face optical polish
        Option2: Si-face CMP Epi-ready, C-face optical polish
      Package multiple wafer(25)shipping box (single wafer package upon request)

       

      6H N-TYPE SIC 2 WAFER SPECIFICATION
      Artic le Number W6HS1N-0-PM-250-S
      Descrption Production Grade 6H SiC Substrate
      Polytype 6H
      Diameter (50.8±38)mm
      Thickness (250±25)um 
      Carrier Typen n-type
      Dopant Nitrogen 
      Resistivity(RT) 0.6-0.10Ω.cm
      Wafer Orientation (0+0.5)°
      Micropipe Density ≤100cm-²  
      Orientation flat orientation parallel{1-100}±5°
      Orientation flat length (15.88±1.65)mm
      Identification flat orientation Si-face:90°cw. frow orientation flat±5°
      Identification flat lenath (8+1.65)mm
      Surface Si-face standard polish Epi-ready
        C-face matted
      Package Package single wafer package or multiple wafer shipping box

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