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      Silicon on Insulator/SOI

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      Diameter 76, 100mm, 125mm, 150mm, 100mm, 300mm
       

       

      Device Thickness and Max Tolerance      index 2-50 +/- .5μm, 0.1~1+/- .025μm

       76mm, 100 mm, 125 mm, and 150 mm:   50-150 +/- 1μm

        >150 +/- 2μm

           index 6-50 +/- .5μm

       200 mm 50-150 +/- 1μm

        >150 +/- 2μm




      Oxide Layer Thickness Standard – .5μm, 1μm, and 2μm

      Optional – .1 – 10μm
      Handle Wafer Thickness 3”, 100mm – 300μm and up

      125 mm, 150mm – 400μm and up

      200mm – 500μm and up

      Tolerance: Standard +/- 25μm

      Special +/- 5μm
      Dopants N type – Phosphorous, Arsenic, and Antimony

      P Type – Boron
      Resistivities Most resistivities available on request including high resistivity Float Zone and low resistivity CZ
      Orientation <1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request

      Standard tolerance +/- .5 degree

      Special tolerance as low as +/- .1 degree
      Flat Orientation All major flats/Notches are on the <110> Plane +/-.5 degree

      Tighter specificatioin available upon request

      Semi std minor flats are standard on 76.2 and 100mm
      Finish Double side polished standard

      Optional backside finishes – nano grind or oxide
      Coatings Oxide and nitride can be supplied on both sides of the wafer.
      Optional Ion Implanted Buried Layer A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available.This service is provided by an outside contractor.

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